Magnetron sputtering is a technology for applying thin films to the substrate of semiconductor heteroepitaxial structures using target evaporation in magnetron discharge plasma. We will talk about them in today’s material.
Method
The method is based on cathode sputtering of the target with ions of the working gas, such as argon or nitrogen. The discharge in the magnetron sputtering system burns in non-uniform crossed electric and magnetic fields localized at the surface of the target being sputtered. For effective discharge burning, it is necessary to create a magnetic field of 0.03 to 0.1 T. The thickness of the coatings can be from several nanometers to several tens of microns. For sputtering alloyed layers, either cathodes doped with the required element or composite cathodes are used.
Magnetron sputtering is widely used in industry. Examples include transparent conductive electrode coatings for creating device structures of photodetectors (solar cells, photodiodes, detectors), as well as other optoelectronic devices.
The following market segmentation by technology types is popular:
- DC Magnetron Sputtering,
- RF Magnetron Sputtering,
- Pulsed Magnetron Sputtering,
- High-Rate Magnetron Sputtering,
- Reactive Magnetron Sputtering.
The marketing study Magnetron Sputtering Systems Market Size, Market Share, Application Analysis, Regional Outlook, Growth Trends, Key Players, Competitive Strategies and Forecasts- 2023 to 2031 states that the global magnetron sputtering systems market was valued at $2.51 billion in 2021 and is expected to reach over $4.06 billion in 2030, growing at a CAGR of 6.5% during the forecast period.
The large number of sputtering applications in the electronics segment such as gate dielectric, printed circuit boards, sensors, surface acoustic wave SAW and spectroscopy, laser lenses, anti-reflective coatings, etc. and in the optics segment contribute to the electronics and optics segment capturing the major market share during the forecast period.
In addition, magnetron sputtering systems are widely used in the automotive, mechanical engineering, biomedical and metallurgical industries. In the biomedical industry, magnetron technology is used, in particular, to manufacture angioplasty devices, radiation capsules, dental implants, etc. In addition, in the automotive and mechanical engineering industries, magnetron sputtering is used to apply thin films to metals to improve their efficiency. The main global players are Buhler AG, Denton Vacuum, Torr International Inc., Moorfield Nanotechnology Limited, Angstrom Engineering Inc., Ulvac, Inc., Prevac SP. Z OO, PVD Products, Inc., AJA International, Inc., Semicore Equipment, Inc.
In this article we are only interested in the patent aspect.
Patent aspect
On the Google.Patents portal, a search for magnetron sputtering returns more than 100,000 documents. The following companies are listed as leaders in the number of patents:
- Applied Materials, Inc. — 3.1%;
- Ningbo Material Technology And Engineering Institute - 1.4%;
- Varian Associates, Inc. - 0.9%;
- Vac-Tec Systems, Inc. - 0.9%;
- Materials Research Corporation - 0.8%.
Champion Applied Materials, Inc. holds 3.1% of patents, with the next few holding even less; that is, there is no oligopoly, much less a monopoly, in invention in this area.
Since we are particularly interested in semiconductor devices, we conducted a special search for magnetron sputtering H01L; Google.Patents returns 11,578 documents. The dynamics by year are shown in Fig. 1.
Figure 1: Dynamics of global patenting of inventions on the topic of “magnetron sputtering H01L”
Source: Author’s interpretation of Google.Patents data 01/26/2025
It is evident that the pace of patenting inventions has been plateauing over the last 10 years. The leaders in patenting by the total number of patents are:
- Xidian University - 3.1%;
- Applied Materials, Inc. — 2.2%;
- Tsinghua University - 2.1%;
- Boe Technology Group Co., Ltd. — 2%;
- South China University of Technology - 1.6%.
As you can see, the overwhelming majority of world patents belong to Chinese universities and companies:
Examples of patents:
- KR100971579B1 Manufacturing method of semiconductor device.
- CN106663609B High-power pulse magnetron sputtering process for realizing high-density high-SP 3 content layer.
- WO2024212481A1 High-reflectivity and high-conductivity multi-component alloy electrode thin film, and preparation method therefor and use thereof.
What about Russia?
In the FIPS database, 139 patents for inventions were found in abstracts for the query magnetron sputtering, of which 60 units are valid. At the same time, under section H01L, only 13 are valid, issued in the period 2011-2023. The search engine “Yandex. Patent” for the query magnetron sputtering indicated 2230 patents, while under section H01L it issued 487 documents for the period since 1980. Let us remind you that “Yandex. Patent” selects all patents of the Russian Federation, both for inventions and for utility models, where the requested term is indicated in the patent body, including as a cited prototype and a rejected version. That is, the FIPS database is narrowed, since it selects the target term from abstracts, and Yandex’s AI is redundant, since it takes everything.
A substantive analysis of current Russian patents for inventions, conducted by Online Patent experts at the end of January 2025, showed the following:
In manufacturing and related enterprises, inventions are of a special, narrowly applied nature, for example:
- No. 2572051 Method for manufacturing an integrated micromechanical relay. JSC “Research Institute for Physical Measurements”. In this method, a dielectric layer of SiC (5) with high elastic properties is deposited using magnetron sputtering;
- No. 2692112 Method for manufacturing through micro-holes in a silicon substrate. JSC Russian Space Systems;
- №2774958 Converter of spin current to charge current based on heterostructure of transition metal perovskites. V.A. Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences.
There is high activity in patenting specialized universities, which indirectly indicates the presence of significant reserves of young specialists. For example:
- No. 2729964 Method for forming an optically transparent ohmic contact to the surface of a semiconductor optical waveguide of an electro-optical modulator. Tomsk State University of Control Systems and Radioelectronics;
- No. 2757681 Method for manufacturing a high-temperature thermoelement. Moscow Institute of Electronic Technology;
- №2789692 Method for synthesizing nanocrystalline silicon carbide films on a silicon substrate. Voronezh State Technical University.
Small innovative enterprises have many patents. For example:
- No. 2696182 Method for manufacturing high-temperature superconducting tape. S-Innovations LLC;
- No. 2799989 Method of magnetron sputtering of gallium oxide in direct current by doping it with silicon atoms. Engineering Center Digital Platforms LLC;
- №2806180 Method for manufacturing flexible solar batteries with an absorbent layer of CdTe on a polymer film. OOO Sangeliant.
Comparatively (for example, with patents for 6th generation mobile communications) there are few patents from non-residents: Hamamatsu Photonics K.K. (JP) 2,799,886 and Tokemek Energy Ltd. (GB) 2,745,295.
The comparatively large number of Russian patents on magnetron sputtering of metals is striking; here are some:
- No. 2426194 Method for manufacturing a nanostructured ohmic contact for a photoelectric converter. A.F. Ioffe Physical-Technical Institute of the Russian Academy of Sciences;
- №2769536 Electroforming method for manufacturing a memory element. K.A. Valiev Institute of Physics and Technology of the Russian Academy of Sciences (W and Al films were deposited by magnetron sputtering);
- №2462785 Method for manufacturing ordered nanostructures. National Research University MIET (a 10 nm thick nickel layer was applied using magnetron sputtering).
Utility models usually repeat Russian inventions. Examples:
- №192815 Thin-film photovoltaic cell based on the ZnO/CuO structure (the photovoltaic cell is a glass substrate onto which a lower solid electrode, a photoconverting layer, which is a pn junction based on the ZnO/CuO structure, and an upper electrode, for example, Cu, Cr, Al, made in the form of a grid, are successively applied by magnetron sputtering). Volga Region State Technological University;
- No. 221645 Semiconductor photodiode for infrared radiation. A.F. Ioffe Physical-Technical Institute of the Russian Academy of Sciences;
- №220600 Heterostructure photodiode for near and mid-IR range based on indium arsenide-phosphide-bismuthide nanowires on silicon substrates. Saint Petersburg National Research Academic University named after Zh.I. Alferov, Russian Academy of Sciences.
There are three databases:
- No. 2021621097 Results of magnetron sputtering of aluminum film on the surface of titanium alloy VT6 and No. 2021622620 Composition of surface layers of VT6 alloy after ion-beam mixing of aluminum. Both - Moscow Polytechnic University (Moscow Polytechnic);
- № 2023620036 Characteristics of prototypes of solid-state thin-film lithium-ion batteries of various electrochemical systems (170 prototypes of solid-state thin-film lithium-ion batteries manufactured by the method of RF magnetron sputtering). Yaroslavl State University named after P.G. Demidov.
There are also three computer programs:
- № 2020612792 Calculation of the production profile of the target material of planar magnetron sputtering systems. “Dubna University”;
- № 2022684070 Magnetron_sputtering_checkout. Peter the Great St. Petersburg Polytechnic University. The program is designed for an automatic system for monitoring the growth of material synthesized by magnetron sputtering. Allows you to process information (sputtering cycle, substrate temperature, supplied current, pressure value in the pressure chamber) about the state of the substrate and the sputtering process and make decisions about changing the parameters based on the data obtained;
- № 2023681572 Program for modeling the process of ion-plasma deposition of oxynitride thin films with simultaneous sputtering of targets of two chemical elements [targets of silicon and molybdenum with nitrogen supplied to the chamber and the presence of a natural residual atmosphere]. Moscow Institute of Electronic Technology.
- There are 11 integrated circuit topologies, they are dedicated to converters based on nanostructures with magnetostrictive effect from the Scientific and Production Complex “Technological Center” (for example, No. 2018630008 and No. 2018630179 ); from RFNC-VNIIEF (No. 2022630058 );
Conclusion
Magnetron sputtering technologies have found wide and stable application in the production of micro- and nanoelectronics, including in Russia. They complement other technologies, in particular laser ablation, liquid-phase epitaxy, plasma-enhanced chemical vapor deposition (PECVD), vacuum arc deposition, physical laser deposition (PLD), molecular beam epitaxy, ion-beam deposition.
Some Russian enterprises, for example, JSC Research and Production Enterprise Istok named after A.I. Shokin, JSC Silicon El Group, JSC Angstrem, JSC Russian Corporation of Rocket and Space Instrument-making and Information Systems, JSC Concern Sozvezdie, JSC NPO Orion, V.G. Mokerov Institute of Microwave Semiconductor Electronics of the Russian Academy of Sciences, Scientific and Technological Center for Microelectronics and Submicron Heterostructures of the Russian Academy of Sciences, possess several technologies (from three to twelve to fifteen) and flexibly apply them for various special purposes in the manufacture of semiconductor products.
The patent situation in the Russian Federation with magnetron technologies is not bad, numerous competencies of different institutions and organizations, as well as individuals, are observed. At the same time, the disadvantages of the magnetron sputtering method are well known and understood, such as: high energy intensity of the process (about 500 eV per atom) and the impossibility of applying uniformly thick coatings to parts of complex shape.